Qinghuang Lin is a Research Staff Member at IBM T.J. Watson Research Center. For more than ten years, he has held a variety of positions in photoresist development, advanced lithography, BEOL materials, BEOL integration, and semiconductor technology strategy at IBM. He has approximately 40 issued and pending US patents in photoresists, lithography, dielectric materials, BEOL integration, and semiconductor fabrication technology. A frequent speaker at and an organizer of professional conferences, Dr. Lin is the editor of 2 books and 2 conference proceedings volumes and the author and co-author of over 55 technical papers. He is a recipient of 9 IBM Invention Achievement Awards. In 2002, he received an IBM Research Division Achievement Award for â€œinvention, development and implementation of 248 nm bilayer resist technology in manufacturing.â€ In addition to his service to SPIE as the Chair of Conference on Advances in Resist Materials and Processing Technology in 2006 and 2007, Dr. Lin serves on the Materials Secretariat of the American Chemical Society and the Executive Committee of the Division of the Polymeric Materials: Science and Engineering of the American Chemical Society. He received his Ph.D. degree from the University of Michigan and was a post-doctoral fellow at the University of Texas at Austin prior to joining IBM.